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GaAs on Si as a substrate for microwave and millimeter-wave monolithic integration

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2 Author(s)
M. I. Aksun ; Coordinate Sci. Lab., Illinois Univ., Urbana, IL, USA ; H. Morkoc

The authors calculated the effective dielectric constant, characteristic impedance, and dielectric loss of a shielded microstrip line manufacture on namely GaAs, Si, and GaAs/Si. Dielectronic loss versus frequency for the GaAs and Si substrates are shown. The same parameters for GaAs/Si substrate were plotted for two different resistivities of the GaAs overlay material, and for each of three different GaAs overlayer thicknesses. The measurements covered the 10-100-GHz frequency range. Depending on the thickness, results show that high-resistivity GaAs epitaxial layers on Si substrates having moderate resistivities reduce the dielectric loss

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IEEE Transactions on Microwave Theory and Techniques  (Volume:36 ,  Issue: 1 )