Referenced Items are not available for this document.
The combined use of several modelling techniques and tools to derive realistic models of power semiconductor devices for use in circuit simulations is illustrated using the GTO thyristor as an example. The resulting GTO model uses analytical expressions to describe its internal physics. Direct implementations of these equations in the SPICE and Saber simulators are then used to obtain rigorous comparison of measured and simulated waveforms
Published in:
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Date of Conference: 20-25 Jun 1994
- Page(s):
- 38 - 43 vol.1
- Meeting Date :
- 20 Jun 1994-25 Jun 1994
- Print ISBN:
- 0-7803-1859-5
- INSPEC Accession Number:
- 4811142
- Conference Location :
- Taipei
- Digital Object Identifier :
- 10.1109/PESC.1994.349752
- Product Type:
- Conference Publications
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