A fully analytical AC large-signal model of the GaAs MESFET for nonlinear network analysis and design

A fully analytical version of an AC large-signal model for the GaAs MESFET is presented. The source model is based on basic principles and the actual physics and geometry of the device. The analytical version was developed by curve fitting the analytical expressions to the source model. The accuracy of the model for microwave circuits is demonstrated using simulation examples of a power amplifier and a mixer.<
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