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A technique for minimizing intermodulation distortion of GaAs FET's

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3 Author(s)
Koizumi, H. ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; Nagata, S. ; Kanazawa, K.

This paper describes the theory to minimize the intermodulation distortion under a certain current bias condition for GaAs FET's. A device-parametric study has been carried out to obtain the general equation that provides the lowest distortion condition as a function of the operating current. Based on the present theory, FET parameters have been designed practically

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:43 ,  Issue: 2 )