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High-speed InGaAlAs/InAlAs multiple quantum well optical modulators with bandwidths in excess of 20 GHz at 1.55 mu m

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5 Author(s)
Kotaka, I. ; Opto-Electron. Lab., NTT, Kanagawa, Japan ; Wakita, K. ; Mitomi, O. ; Asai, Hiromitsu
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The modulator has a large on/off ratio, a low driving voltage (4 V), and operates in the 1.55- mu m wavelength region. Small device capacitance (0.2 pF) has been obtained by using spin-coated polyimides under the bonding pads, and small stray capacitance (0.07 pF) and bonding wide inductance (0.3 nH) have been realized. The modulator requires the lowest power yet reported for a high-frequency-operation external modulator.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:1 ,  Issue: 5 )