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High fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor having new wiring structure over photodiodes

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15 Author(s)
Tohyama, S. ; Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan ; Masubuchi, K. ; Konuma, K. ; Azuma, H.
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A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using a new wiring structure, referred to as CLOSE Wiring. CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4 percent fill factor and 3.3 /spl mu/m wide VCCD in a 30 /spl mu/m/spl square/ pixel. The charge handling capability for VCCD achieves 9.8/spl times/10/sup 5/ electrons. The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with f/1.3 optics.<>

Published in:

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Date of Conference:

5-8 Dec. 1993