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Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers

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9 Author(s)
H. Wang ; Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; T. N. Ton ; R. Lai ; D. C. W. Lo
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This paper reports the development of low noise and high gain W-band monolithic amplifiers based on 0.1 /spl mu/m pseudomorphic InAlAs/InGaAs/InP HEMT technology. A one-stage amplifier designed for low noise demonstrates a measured noise figure of 2.6 dB and an associated small signal gain of 7 dB at 96 GHz with a low dc power consumption of 6 mW. Another four-stage amplifier designed for high gain has a small signal gain of 27/spl plusmn/2 dB from 80-100 GHz, with a noise figure of about 5 dB and a dc power consumption of 43 mW. To our knowledge, these are the best reported noise figure and gain performance of monolithic amplifiers operating at these frequencies and represent state-of-the-art results.<>

Published in:

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Date of Conference:

5-8 Dec. 1993