Reduction of 1/f noise current with non-equilibrium electron transport in AlInAs/InGaAs heterojunction bipolar transistors

We report on the reduction of 1/f noise current by utilizing the non-equilibrium carrier transport in AlInAs/InGaAs HBTs. A 10-dB reduction in the equilibrium input noise current density is obtained by reducing the base thickness from 100 nm to 70 mn for transistors with emitter dimensions of 3/spl times/5 /spl mu/m/sup 2/. As the result, a 1/f noise corner frequency of 1.55 kHz is obtained. This is the lowest 1/f corner frequency amongst any compound semiconductor devices reported to date.<
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