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A simulation of micro-loading phenomena in dry-etching process using a new adsorption model

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4 Author(s)
Misaka, A. ; Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; Harafuji, K. ; Nakagawa, H. ; Kubota, M.

A new adsorption model in surface reaction of dry-etching process is proposed. The model allows the simulation of micro-loading phenomena in the etching rate, profile and selectivity of SiO/sub 2/ hole etching with hydrofluorocarbon gases. A new 2D-string model with Boolean operation is further developed to simulate the precise profile.<>

Published in:

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Date of Conference:

5-8 Dec. 1993