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A 128/spl times/128 CMOS active pixel image sensor for highly integrated imaging systems

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3 Author(s)
Mendis, S.K. ; Center for Space Microelectronics Technol., California Inst. of Technol., Pasadena, CA, USA ; Kemeny, S.E. ; Fossum, E.R.

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 /spl mu/m p-well CMOS process, and consists of a 128/spl times/128 array of 40 /spl mu/m/spl times/40 /spl mu/m pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.<>

Published in:

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Date of Conference:

5-8 Dec. 1993