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Fabrication of high efficiency CuIn(Ga)Se2 thin film solar cell by of high efficiency selenization with H2Se

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5 Author(s)
H. Sato ; Fuji Electr. Corp. Res. & Dev. Ltd., Kanagawa, Japan ; T. Hama ; E. Niemi ; Y. Ichikawa
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Effects of preparation conditions for precursors in selenization with H2Se on film properties of CuInSe2 and CuIn 1-xGaxSe2 were studied. Using a Cu/In stacked layer precursor prepared at temperature of 200 C, grain sizes for selenized CuInSe2 films became as large as 2 μm. It was found from XRD analysis that MoSe2 was formed at the boundary to the Mo back electrode for a selenization process using the stacked layer precursors. Formation of MoSe2 was suppressed using a Cu-In-Se mixed compound precursor. Grain sizes for selenized CuInSe2 films with Cu-In-Se precursors prepared at 200 C were about 1 μm. A glass/Mo/CuIn(Ga)Se2/CdZnS/ZnO cell structure was fabricated to study the effects of the precursor on cell performances. It was found that Voc was improved for Cu-In-Se precursors as substrate temperature increased. A fill factor exceeding 0.7 was obtained using Cu-In-Se precursors prepared at 200 C. A value of Voc was improved with Ga doping near the boundary to the Mo back electrode. Using Se mixed precursors, conversion efficiencies of 12.6% and 11.7% were obtained for CuInSe2 solar cells and CuIn1-xGaxSe2 solar cells

Published in:

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Date of Conference:

10-14 May 1993