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A piezoresistive sensor chip for measurement of stress in electronic packaging

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4 Author(s)
Jaeger, R.C. ; Dept. of Electr. Eng., Auburn Univ., AL, USA ; Suhling, J.C. ; Carey, M.T. ; Johnson, R.W.

This paper presents the first experimental results of calibration of the 22.5° “off-axis” rosette. This rosette requires the application of only uniaxial stress for measurement of the three individual piezoresistive coefficients of silicon: π11, π12 and π44. Of even greater potential import. This rosette yields inherently temperature compensated values of the coefficients π44 and πD=(π11 12) P-type off-axis rosettes have been characterized as a function of temperature and values for the temperature dependencies of π44 and πD are reported. The coefficients π44 in p-type silicon and π D in n-type silicon are needed for an optimized stress sensor on (100) silicon

Published in:

Electronic Components and Technology Conference, 1993. Proceedings., 43rd

Date of Conference:

1-4 Jun 1993