Ultra-high speed and low crosstalk four-channel receiver optoelectronic integrated circuit (OEIC) arrays have been successfully fabricated. GaInAs pin PDs and AlInAs/GaInAs high electron mobility transistors were monolithically integrated on an InP substrate. The high frequency characteristics of the receiver OEIC arrays were evaluated with on-wafer microwave probing. Two types of receiver OEIC arrays were demonstrated. One type of array exhibited high speed operation up to 5.0 Gb/s and low crosstalk characteristics less than -38 dB, while the other exhibited a high sensitivity of -21.5 dBm at 3.0 Gb/s and low crosstalk characteristics less than -40 dB
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Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Date of Conference: 1-4 Jun 1993