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High-power CW operation of AlGaInP laser-diode array at 640 nm

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9 Author(s)
Skidmore, J.A. ; Lawrence Livermore Nat. Lab., CA, USA ; Emanuel, M.A. ; Beach, R.J. ; Benett, W.J.
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Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 2 )