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Design and manufacturing considerations of a 0.5 μm CMOS technology on TFSOI

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7 Author(s)
Bor-Yuan Hwang ; Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA ; Jenn Tsao ; Racanelli, M. ; Huang, M.
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While thin film SOI (TFSOI) advantages over bulk technology have been reported over the past many years, the TFSOI commodity products are yet to be introduced. Applications of SOI remain in the thick film rad-hard oriented niche market. Theoretical study and silicon implementation of SOI physics and a cost model have for the most part supported the advantages of TFSOI. This paper discusses considerations for the SOI manufacturing feasibility, and the implication to the TFSOI product introduction. The emphasis is placed on the 0.5 μm level since this is the state-of-the-art geometry for production of bulk CMOS. Also the huge capital expense for a fabrication line at 0.5 μm and beyond will inevitably prolong the technology lifetime and call for value added technology. TFSOI technology at 0.5 μm fits into the above category

Published in:

SOI Conference, 1993. Proceedings., 1993 IEEE International

Date of Conference:

5-7 Oct 1993