Cart (Loading....) | Create Account
Close category search window
 

Subthreshold MOSFET conduction model and optimal scaling for deep-submicron fully depleted SOI CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yeh, P.C. ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA ; Fossum, J.G.

In this paper we present results of a comprehensive study of the subthreshold characteristics of deep-submicron fully depleted SOI MOSFETs, and suggest optimal CMOS scaling rules based on PISCES simulations and two-dimensional analytic modeling for circuit simulation. Measurements reveal that the subthreshold swing S, which is nearly ideal at 60 mV for long-channel fully depleted devices, tends to increase drastically as L is scaled to deep-submicron values. Our previous study showed that the front-surface current contributes to the increased S via gate bias-dependent source/drain charge sharing, which reduces the effective threshold voltage. A more recent study shows that current throughout the SOI film body, including the back surface, tends to overwhelm the front-surface current in the subthreshold region, rendering the drain current less dependent on the front-gate bias and hence increasing S even more

Published in:

SOI Conference, 1993. Proceedings., 1993 IEEE International

Date of Conference:

5-7 Oct 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.