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Signal generation in a hydrogenerated amorphous silicon detector

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6 Author(s)
S. Qureshi ; Lawrence Berkeley Lab., CA, USA ; V. Perez-Mendez ; S. N. Kaplan ; I. Fujieda
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The signals produced in thick hydrogenated amorphous silicon p-i-n detectors were measured using incident light pulses with different mean free paths. The signal shapes as a function of bias potential were analyzed in terms of the mobilities and mean free paths of the electrons and holes. The latter were measured by transient photoconductivity methods using a pulsed nitrogen-dye laser system. Measurements on relatively thick samples of a-Si:H show ionized dangling bond densities in the range of 6-70×1014 cm-3. While the electron mobility increases by ~20% at high field, hole mobility increases by ~40% from the low-field values. This increase in mobility is attributed to dispersion of the transport, but there may be a Poole-Frenkel effect involving the nondispersive electrons

Published in:

IEEE Transactions on Nuclear Science  (Volume:36 ,  Issue: 1 )