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Phenomenological modeling of plasma generation for real-time control of RIE systems

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4 Author(s)
Chandhok, Manish ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Giles, M.D. ; Hanish, P.D. ; Grizzle, J.W.

A phenomenological approach to modeling plasma parameters in a reactive ion etching system is described, combining a simplified continuum model of electrons and ions with a continuously stirred tank reactor model of plasma chemistry. The model relates equipment parameters such as power and pressure to parameters central to equipment control such as reactive radical concentration. The simplified models allow transient response characteristics of the equipment to be calculated in reasonable time

Published in:

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Date of Conference:

5-6 Jun 1994