Cart (Loading....) | Create Account
Close category search window
 

Phenomenological modeling of plasma generation for real-time control of RIE systems

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chandhok, Manish ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Giles, M.D. ; Hanish, P.D. ; Grizzle, J.W.

A phenomenological approach to modeling plasma parameters in a reactive ion etching system is described, combining a simplified continuum model of electrons and ions with a continuously stirred tank reactor model of plasma chemistry. The model relates equipment parameters such as power and pressure to parameters central to equipment control such as reactive radical concentration. The simplified models allow transient response characteristics of the equipment to be calculated in reasonable time

Published in:

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Date of Conference:

5-6 Jun 1994

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.