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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:36 Issue:9 Help

Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs

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4 Author(s)
Serikawa, T. ; NTT Appl. Electron. Lab., Tokyo, Japan ; Shirai, S. ; Okamoto, A. ; Suyama, S.

A low-temperature process developed for fabrication of high-mobility polycrystalline silicon thin-film transistors (poly-Si TFTs) is discussed. Its main feature is the use of a sputter-deposited Si film followed by laser irradiation and a sputter-deposited gate SiO 2 film. The poly-Si TFTs have a mobility of 350-cm2/V-s. They have been successfully applied to peripheral circuits for large-area liquid-crystal displays (LCDs)

Published in:
Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 9 )

Date of Publication: Sep 1989

Page(s):
1929 - 1933
ISSN :
0018-9383
INSPEC Accession Number:
3499867
Digital Object Identifier :
10.1109/16.34272
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Sep 1989
Sponsored by :
IEEE Electron Devices Society

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