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W-band monolithic low noise amplifiers for advanced microwave scanning radiometer

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7 Author(s)
Itoh, Y. ; Electro-Opt. & Microwave Syst. Lab., Mitsubishi Electr. Corp., Kamakura, Japan ; Nakahara, K. ; Sakura, T. ; Yoshida, N.
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Monolithic low noise amplifiers using 0.15-μm AlGaAs-InGaAs-GaAs pseudomorphic HEMTs with a passivation film have been developed at W-band for the Advanced Microwave Scanning Radiometer. A two-stage monolithic amplifier has achieved a noise figure of 3.4 dB with a small signal gain of 8.7 dB at 91 GHz. A six-stage amplifier cascading three two-stage monolithic amplifier chips has achieved a noise figure of 4.2 dB with a small signal gain of 29.7 dB at 91 GHz. Taking into account the minimum noise figure of 2.5 dB with an associated gain of 4.3 dB of 0.15×60 μm2 PHEMTs at 90 GHz, these results demonstrate that a good noise matching has been successfully achieved.

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Microwave and Guided Wave Letters, IEEE  (Volume:5 ,  Issue: 2 )