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An extended Tanh law MOSFET model for high temperature circuit simulation

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4 Author(s)
Osman, A.A. ; Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA ; Osman, M.A. ; Dogan, N.S. ; Imam, M.A.

The Tanh law MOSFET model proposed earlier by Shousha & Aboulwafa (see ibid., vol. 28, no. 2, p. 176-9, 1993) is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27-200°C)

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Solid-State Circuits, IEEE Journal of  (Volume:30 ,  Issue: 2 )