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Modeling of optical waveguide modulators on III-V semiconductors

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3 Author(s)
Glingener, C. ; Lehrstuhl fur Hochfrequenztech., Dortmund Univ., Germany ; Schulz, D. ; Voges, E.

Efficient two-dimensional algorithms for the analysis of optical waveguide modulators are developed. The basic semiconductor equations are solved numerically taking into account carrier degeneracy, heterojunctions, and the nonparabolic band structure of the GaAs- and InP-based III-V compounds. An analytical, semiempirical model is utilized for the fundamental dielectric function. The variation of the dielectric function due to field related and carrier related phenomena, i.e., linear electrooptic-, electrorefractive- and plasma effects, bandfilling and bandgap shrinkage, are considered. The induced anisotropy and losses are described by a dielectric tensor. Therefore, the vectorial wave equation is solved using a perturbation method. The theoretical results are in excellent agreement with experimental data

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Quantum Electronics, IEEE Journal of  (Volume:31 ,  Issue: 1 )