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Approximate optical gain formulas for 1.55-μm strained quaternary quantum-well lasers

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4 Author(s)
Ma, T.-A. ; Dept. of Phys. & Comput., Wilfrid Laurier Univ., Waterloo, Ont., Canada ; Li, Z.-M. ; Makino, T. ; Wartak, M.S.

We have used an efficient analytical model to calculate the optical gain of the strained quantum-well laser of InGaAsP-InP material system. Based on the anisotropic effective mass theory, empirical formulas delineating the relations between optical gain, emission wavelength, well width and material compositions are obtained for 1.55-μm In1-xGaxAsyP1-y quaternary strained quantum-well lasers. Results show a logarithmic relation between the peak optical gain and carrier concentration for all possible material compositions of the quaternary system. We show that the logarithmic relation can be derived algebraically

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Quantum Electronics, IEEE Journal of  (Volume:31 ,  Issue: 1 )