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Approximate optical gain formulas for 1.55-μm strained quaternary quantum-well lasers

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4 Author(s)
T. -A. Ma ; Dept. of Phys. & Comput., Wilfrid Laurier Univ., Waterloo, Ont., Canada ; Z. -M. Li ; T. Makino ; M. S. Wartak

We have used an efficient analytical model to calculate the optical gain of the strained quantum-well laser of InGaAsP-InP material system. Based on the anisotropic effective mass theory, empirical formulas delineating the relations between optical gain, emission wavelength, well width and material compositions are obtained for 1.55-μm In1-xGaxAsyP1-y quaternary strained quantum-well lasers. Results show a logarithmic relation between the peak optical gain and carrier concentration for all possible material compositions of the quaternary system. We show that the logarithmic relation can be derived algebraically

Published in:

IEEE Journal of Quantum Electronics  (Volume:31 ,  Issue: 1 )