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Cell and circuit design for single-poly EPROM

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5 Author(s)
Hoe, D.H.K. ; Dept. of Electr. Eng., Toronto Univ., Ont., Canada ; Schultz, K.J. ; Salama, C.A.T. ; Hadaway, R.A.
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The design and characterization of single-poly erasable programmable read-only memory (EPROM) cells in a standard CMOS p-well technology are discussed. Process-compatible high-voltage drivers for programming the cells are presented. A memory array is implemented to illustrate the integration of the cells with standard logic circuitry

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:24 ,  Issue: 4 )