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A 50 dB variable gain amplifier using parasitic bipolar transistors in CMOS

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2 Author(s)
T. -W. Pan ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; A. A. Abidi

A variable-gain amplifier (VGA) with a gain range of 50 dB has been implemented in a standard 3 μm CMOS process using parasitic lateral and vertical bipolar transistors to form the core of the circuit. The bipolar transistors had been characterized extensively. The VGA has a bandwidth larger than 3 MHz over the whole gain range and operates on a single 5 V power supply. The active area is about 0.8×0.9 mm2

Published in:

IEEE Journal of Solid-State Circuits  (Volume:24 ,  Issue: 4 )