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Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures

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3 Author(s)
V. S. Pershenkov ; Moscow Eng. Phys. Inst., Russia ; V. V. Belyakov ; A. V. Shalnov

A method for low-dose-rate MOS device response testing is presented and verified. The test technique is based on the use of a special switched-bias irradiation with subsequent positive and negative pulses. The negative bias pulses provide nearly complete annealing of the oxide charge trapped during the positive bias pulses. As a result, after a series of positive/negative cycles the value of oxide-trapped charge does not change significantly but the interface charge increases. The advantages, limitations and applications of this test technique are described.<>

Published in:

IEEE Transactions on Nuclear Science  (Volume:41 ,  Issue: 6 )