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Improvement of radiation hardness in fully-depleted SOI n-MOSFETs using Ge-implantation

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6 Author(s)

This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a silicon-on-insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to reduce parasitic bipolar effects. The Ge-implant also serves the dual purpose of positioning most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel threshold voltage.<>

Published in:

Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 6 )

Date of Publication:

Dec. 1994

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