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Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides

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3 Author(s)
Zvanut, M.E. ; Alabama Univ., Birmingham, AL, USA ; Benefield, C. ; Hughes, H.L.

We describe electrical and spectroscopic measurements of SIMOX subjected to supplemental oxygen implantation and standard 1000/spl deg/C post implantation annealing. Point contact transistor measurements indicate that the supplemental oxygen implantation creates a net increase in radiation-induced trapped charge, and, surprisingly, electron paramagnetic resonance studies show that the O vacancy concentration increases. The electron paramagnetic resonance results suggest that the radiation tolerance of the supplemental oxides is due to insufficiently annealed implantation damage. A higher post supplemental anneal temperature minimizes the radiation-induced trapped charge, but further studies are necessary to assess the total impact of the high temperature anneal.<>

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Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 6 )