Referenced Items are not available for this document.
Single event burnout (SEB) phenomenon of power MOSFETs caused by nuclear reactions with incident heavy ions has been probed experimentally. 520 MeV Kr and 3536 MeV Xe ions having the same LET were used as incident ions for the experiment. The observed SEB threshold voltage was quite different for both ions. Detailed analysis revealed that the Xe ions can produce excess charge as a result of nuclear reactions with Si atoms. The result suggests that usual SEB immunity test as a function of LET is not adequate for high voltage devices that have much larger sensitive volume.<
Published in:
Nuclear Science, IEEE Transactions on
(Volume:41
,
Issue:
6
)
Date of Publication: Dec. 1994
- Page(s):
- 2210 - 2215
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 4871587
- Digital Object Identifier :
- 10.1109/23.340564
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec. 1994
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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