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SPICE analysis of the SEU sensitivity of a fully depleted SOI CMOS SRAM cell

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1 Author(s)
Alles, M.L. ; Ibis Technol. Corp., Danvers, MA, USA

SPICE analysis of SEU sensitivity of a 6-T SRAM cell using commercially-representative fully depleted SOI CMOS technology parameters indicates that reduction of the minority carrier lifetime (parasitic bipolar gain) and use of thinner silicon can significantly reduce SEU sensitivity.<>

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Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 6 )