By Topic

Two parameter model for predicting SEU rate [memory devices]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
V. V. Miroshkin ; Petersburg Nucl. Phys. Inst., Gatchina, Russia ; M. G. Tverskoy

Two parameter model (volume and threshold energy) for describing Single Event Upsets (SEU) rate in memory devices is proposed. The method of evaluation of these parameters is discussed. It is shown that there is a good agreement between experimental and calculated data.<>

Published in:

IEEE Transactions on Nuclear Science  (Volume:41 ,  Issue: 6 )