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Two parameter model for predicting SEU rate [memory devices]

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2 Author(s)
Miroshkin, V.V. ; Petersburg Nucl. Phys. Inst., Gatchina, Russia ; Tverskoy, M.G.

Two parameter model (volume and threshold energy) for describing Single Event Upsets (SEU) rate in memory devices is proposed. The method of evaluation of these parameters is discussed. It is shown that there is a good agreement between experimental and calculated data.<>

Published in:

Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 6 )