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Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique

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11 Author(s)
Matsukawa, T. ; Sch. of Sci. & Eng., Waseda Univ., Tokyo, Japan ; Kishida, A. ; Tanii, T. ; Koh, M.
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Total dose effect on the soft-error susceptibility of 64 kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage (V/sub th/) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.<>

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Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 6 )