Proton-induced charge transfer degradation in CCDs for near-room temperature applications

An optical technique for measuring charge transfer inefficiency (CTI) in CCDs, operated under near-room temperature, high readout rate conditions, is described. It is possible to measure trap emission times and CTI dependence on signal size, background charge and clock waveform shape to high accuracy, both for serial and parallel transfers. It is shown that the presence of background charge (or "fat zero") can substantially improve charge transfer efficiency.<
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