Cart (Loading....) | Create Account
Close category search window
 

Co/sup 60/ gamma ray and electron displacement damage studies of semiconductors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Xapsos, M.A. ; Naval Res. Lab., Washington, DC, USA ; Summers, G.P. ; Blatchley, C.C. ; Colerico, C.W.
more authors

A general method for relating Co/sup 60/ gamma ray and monoenergetic electron beam displacement damage is presented. The approach is based on the concept of effective "displacement damage dose", which is analogous to ideas used to study ionizing radiation effects. The response to electron damage of p-type gallium arsenide and indium phosphide solar cells, as previously reported for p-type silicon solar cells, is proportional to the square of the nonionizing energy loss.<>

Published in:

Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 6 )

Date of Publication:

Dec. 1994

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.