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Study of the defects induced in N-type silicon irradiated by 1-3 MeV protons

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6 Author(s)

The electrical properties of semiconductor components can be greatly modified by proton implantation. Spreading resistance, C-V (capacitance voltage) and DLTS (deep levels transient spectroscopy) measurements have been used to characterize N-type silicon irradiated by MeV proton at fluences up to 10/sup 14/p/sup +/cm/sup -2/. The greatest drawback induced by proton implantation is the overdoping effect which can strongly reduce device efficiency. The present work reports this effect in both annealed and unannealed samples.<>

Published in:

IEEE Transactions on Nuclear Science  (Volume:41 ,  Issue: 6 )