Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Bounding the total-dose response of modern bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Kosier, S.L. ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Combs, W.E. ; Wei, A. ; Schrimpf, R.D.
more authors

The excess base current in an irradiated BJT increases superlinearly with total dose at low-total-dose levels. In this regime, the excess base current depends on the particular charge-trapping properties of the oxide that covers the emitter-base junction. The device response is dose-rate-, irradiation-bias-, and technology-dependent in this regime. However, once a critical amount of charge has accumulated in the oxide, the excess base current saturates at a value that is independent of how the charge accumulated. This saturated excess base current depends on the device layout, bulk lifetime in the base region, and the measurement bias. In addition to providing important insight into the physics of bipolar-transistor total-dose response, these results have significant circuit-level implications. For example, in some circuits, the transistor gain that corresponds to the saturated excess base current is sufficient to allow reliable circuit operation. For cases in which the saturated value of current gain is acceptable, and where other circuit elements permit such over-testing, this can greatly simplify hardness assurance for space applications.<>

Published in:

Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 6 )