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A 0.8nV/√Hz CMOS preamplifier for IC-magneto-resistive read elements

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2 Author(s)
H. W. Klein ; Hacienda Design Lab., IMP Inc., Pleasanton, CA, USA ; M. E. Robinson

The first CMOS preamplifier IC for magnetoresistive (MR) read elements for use in state-of-the-art tape drives is presented. The circuit's noise performance of 0.8 nV/√Hz includes noise contributions from both the amplifier and the integrated current source needed to bias the MR elements. It will be shown that a single-ended input architecture is highly attractive for MR preamps because it offers advantages such as lowest noise levels and substantially reduced power and area consumption. Also, a current-mode amplifier (CMA) has been developed to enhance the preamp's bandwidth, large-signal capability and PSRR. The quad preamp has been implemented in a 1.2 μm CMOS process and measures 4.5×4.24 mm2

Published in:

IEEE Journal of Solid-State Circuits  (Volume:29 ,  Issue: 12 )