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Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO2 gate dielectrics

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4 Author(s)
G. Q. Lo ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; D. K. Shih ; W. Ting ; D. L. Kwong

The radiation-induced interface state generation Delta Dit in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO2. The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface 'hardness' of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides.

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Electronics Letters  (Volume:25 ,  Issue: 20 )