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Asymmetric Chevron type junctions for hybrid bubble memory devices with 16-Mbit/cm2 storage density

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3 Author(s)
Sato, T. ; Hitachi Ltd., Tokyo, Japan ; Ikeda, T. ; Suzuki, R.

Junctions between Permalloy and ion-implanted tracks for high-density hybrid bubble memory devices (>or=16 Mb/cm2) using 0.5- mu m-diameter bubbles have been investigated at a 100-kHz drive field. The conventional junctions developed for 4-Mb/cm2 devices have been found not to work at all. A novel type of asymmetric chevron (AC) junction has been proposed and operated. With the large volume of AC Permalloy patterns and the shallow ion-implanted channel, AC junctions show an operating bias-field margin of more than 6%. The feasibility of junctions for hybrid devices with 16-Mb/cm2 storage density has been confirmed.

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Magnetics, IEEE Transactions on  (Volume:24 ,  Issue: 3 )