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Improved Y-domain magnetic film memory elements

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6 Author(s)

Improved versions of a Y-domain memory element are presented. These improvements include element shape, detector configuration, element material composition, and element-substrate interface considerations. It is shown that the element can be optimized for use in a solid-state random-access memory. Using a shortened element with 60 degrees head and tail angles and an offset detector produces an output signal which approaches the ideal case.

Published in:

IEEE Transactions on Magnetics  (Volume:24 ,  Issue: 3 )