Referenced Items are not available for this document.
We report on the fabrication of highly efficient GaAs MESFET's, the design for low distortion, and the performance of this MMIC. Two power MESFET's and input, interstage, and output matching circuits were integrated in a very small chip size of 1.0 mm×1.5 mm. This MMIC achieved an output power of 22 dBm at 1.9 GHz with high power added efficiency of 49.5% and low adjacent channel leakage power of -56 dBc under the low operating voltage of 3.0 V. This result represents one of the highest efficiencies that have been reported. This MMIC has a promising future for 1.9 GHz digital cordless phone applications
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:42
,
Issue:
12
)
Date of Publication: Dec 1994
- Page(s):
- 2623 - 2628
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 4877273
- Digital Object Identifier :
- 10.1109/22.339806
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1994
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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