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A V-band high-efficiency pseudomorphic HEMT monolithic power amplifier

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4 Author(s)
Sharma, A.K. ; Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Onak, G.P. ; Lai, R. ; Tan, K.L.

This paper presents a high-power and high-efficiency monolithic power amplifier at V-band utilizing highly reliable and manufacturable 0.15 μm InGaAs-AlGaAs-GaAs pseudomorphic HEMT fabrication technology. The performance of the power amplifier is 13.8 dB small signal gain, 13.9% power-added efficiency, and 26.83 dBm (482 mW) compressed power output at 60 GHz for unpassivated HEMT process. The same circuit with passivated process produced a linear gain of 13.2 dB, 11% power-added efficiency, and compressed output power of 25.68 dBm (370 mW). The producibility of this amplifier has been demonstrated in volume production with several wafer lots resulting in a 20% total yield through RF tests

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:42 ,  Issue: 12 )

Date of Publication:

Dec 1994

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