Referenced Items are not available for this document.
Five versions of monolithic W-band 0.1 μm AlGaAs-InGaAs-GaAs pseudomorphic HEMT, four-stage, low noise amplifiers based on two different designs were developed. These millimeter wave monolithic integrated circuits have produced a minimum noise figure of 3.5 dB with 23.0 dB gain at 92 GHz and a maximum gain of 33.5 dB with a 6.2 dB noise figure at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips feature coplanar waveguide circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:42
,
Issue:
12
)
Date of Publication: Dec 1994
- Page(s):
- 2590 - 2597
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 4877268
- Digital Object Identifier :
- 10.1109/22.339801
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1994
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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