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A novel HBT distributed amplifier design topology based on attenuation compensation techniques

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3 Author(s)
Kobayashi, K.W. ; Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Esfandiari, R. ; Oki, A.K.

We report on a novel HBT distributed amplifier design which achieves the highest gain-bandwidth product (GBP) per device fT so far reported for HBT distributed amplifiers. This paper introduces a new design topology for HBT DA's which incorporates attenuation compensation on both the input and output transmission lines. A four-section HBT DA using this novel topology achieves a gain of 15 dB and a 3-dB bandwidth of >15 GHz. The resulting gain-bandwidth product is 84 GHz. When normalized to the device fT , this DA achieves the highest normalized gain-bandwidth-product figure of merit for HBT DA's, ≈3.67, which is a 55% improvement over existing state-of-the-art performance. Attenuation compensation of the input transmission line is realized using HBT active impedance transformations. The resulting transistor configuration consists of a common-collector driving a common-emitter-cascode transistor pair. This configuration offers 15-20 dB more available gain for the device unit cell, and results in gain-bandwidth product improvements of 200% over a conventional common-emitter DA configuration. This paper discusses the design theory, techniques, and measurements of this newly developed HBT distributed amplifier topology

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:42 ,  Issue: 12 )