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GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance

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3 Author(s)
Krishnamurthi, Kathiravan ; Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada ; Nilsen, S.M. ; Harrison, R.G.

Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al0.4Ga0.6As barrier, and using In0.2Ga0.8As spacers, one can increase the effective barrier height, thereby achieving SBVs with both high Q and good capacitance-modulation characteristics. Simulation of a 192-GHz tripler using these varactors shows purely reactive multiplication, without the output-power saturation both predicted and observed in triplers using leaky-barrier SBVs

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:42 ,  Issue: 12 )