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Nano-meter electrode fabrication technology using anodic oxidation resist and application to 20 GHz-range SAW devices

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5 Author(s)
Yamanouchi, K. ; Res. Inst. of Electr. Commun., Tohoku Univ., Sendai ; Odagawa, H. ; Meguro, T. ; Wagatsuma, Y.
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Nano-meter lithography technology is very important for high density integrated circuits and higher frequency-range SAW devices. The frequency ranges of mobile communication systems are now around 1 GHz and are extending to 2~4 GHz. Moreover SAW devices require a frequency range of around 10 GHz. The authors propose new lithography techniques of below 0.05 μm electrode width. The electrodes are fabricated by using very thin anodic oxidation films as a resist and wet or dry etching techniques. The results show 0.075 μm width IDTs with thickness of about 0.03 μm on 128° Y-X LiNbO3. SAW experimental results show the 20 GHz-range characteristics. Also, new lithography technologies are applied to 2 GHz low loss filters using a unidirectional transducer

Published in:

Ultrasonics Symposium, 1993. Proceedings., IEEE 1993

Date of Conference:

31 Oct-3 Nov 1993