By Topic

Electronically controlled etch-mask for silicon bulk micromachining

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kwa, T.A. ; Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands ; Wolffenbuttel, R.F.

Wafers that are to be submitted to anisotropic etching in aqueous KOH are conventionally passivated with a silicon dioxide or nitride layer in which backside windows are etched to define the microstructures. A different method to mask the backside of a silicon wafer for this purpose is presented. The method makes use of the phenomenon that silicon is not etched in KOH when biased above the passivation potential. The mask is defined by applying a set of bias voltages to the front of the wafer instead of patterning a deposited passivation layer at the backside, for which an accurate double-sided alignment is required. The feasibility of the method was demonstrated with the fabrication of membranes and suspended masses of various sizes

Published in:

Microelectromechanical Systems, Journal of  (Volume:3 ,  Issue: 4 )