By Topic

Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Y. Pan ; Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore ; K. K. Ng ; C. C. Wei

The mobility and the series resistant degradation of LDD NMOSFET's were determined independently for the first time. Three device structures with different styles of drain engineering: 1) modestly doped LDD; 2) large-angle-tilt implanted drain, and 3) buried LDD were studied. We observed clearly that the series resistant drift dominates the initial device degradation and the relative importance of the mobility degradation increases as the stress time proceeds. Our work provides a useful guideline for device reliability optimization and for the development of the device degradation model for the circuit reliability simulation.<>

Published in:

IEEE Electron Device Letters  (Volume:15 ,  Issue: 12 )