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Noise and small-signal performance of three different monolithic InP-based 10 Gbit/s photoreceiver OEICs

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6 Author(s)
Kaiser, D. ; Dep. Opto-Electon. Components ZFZ/WO, Alcatel SEL, Stuttgart ; Besca, F. ; Grosskopf, H. ; Gyuro, I.
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Three circuit concepts (high impedance, common gate, and transimpedance) for a 10 Gbit/s monolithic receiver OEIC consisting of an InGaAs-InP pin photodiode and InAlAs-InGaAs-InP HEMTs are compared in terms of noise and small-signal performance using on-wafer measurements. A total equivalent input noise current of 13.5 pA/√(Hz) within the bandwidth of the transimpedance circuit is the lowest value ever reported for a monolithic InP-based 10 Gbit/s receiver OEIC

Published in:

Electronics Letters  (Volume:30 ,  Issue: 24 )

Date of Publication:

24 Nov 1994

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